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| 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features * Low noise figure NF = 1.0 dB typ. at f = 200 MHz * High gain PG = 27.6 dB typ. at f = 200 MHz Outline 3SK300 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 8 8 25 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR)G2SS I G1SS I G2SS I DS(op) Min 14 8 8 -- -- 4 0 0 20 2.4 0.8 -- 24 -- 12 -- -- Typ -- -- -- -- -- 8 +0.2 +0.3 25 3.1 1.1 0.021 27.6 1.0 15.6 3.0 2.7 Max -- -- -- 100 100 14 +1.0 +1.0 -- 3.5 1.4 0.04 -- 1.5 -- 4.0 3.5 Unit V V V nA nA mA V V ms pF pF pF dB dB dB dB dB Test conditions I D = 200 A, VG1S = -3 V, VG2S = -3 V I G1 = 10 A, VDS = VG2S = 0 I G2 = 10 A, VDS = VG1S = 0 VG1S = 6 V, VDS = VG2S = 0 VG2S = 6 V, VDS = VG1S = 0 VDS = 6 V, VG1S = 0.75 V, VG2S = 3 V VDS = 10 V, VG2S = 3 V, I D = 100 A VDS = 10 V, VG1S = 3 V, I D = 100 A VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 200 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 60 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Note: Marking is "ZR-" |yfs| Ciss Coss Crss PG NF PG NF NF 2 3SK300 Main Characteristics 3 3SK300 4 3SK300 5 3SK300 6 3SK300 7 3SK300 Package Dimentions Unit: mm 8 3SK300 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 9 |
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